Bipolar Switching Properties of GdOx:SiO2 Thin Film Resistive Random Access Memory Using Co-Sputtering Technology

Bipolar resistive switching of chromium oxide for resistive random access memory

This study investigates the resistance switching characteristics of Cr2O3-based resistance random access memory (RRAM) with Pt/Cr2O3/TiN and Pt/Cr2O3/Pt structures. Only devices with Pt/Cr2O3/TiN structure exhibit bipolar switching behavior after the forming process because TiN was able to work as an effective oxygen reservoir but Pt was not. Oxygen migration between Cr2O3 and TiN was observed ...

Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations

A stochastic model of the resistive switching mechanism in bipolar metal-oxide-based resistive random access memory RRAM is presented. The distribution of electron occupation probabilities obtained is in good agreement with previous work. In particular, it is shown that a low occupation region is formed near the cathode. Our simulations of the temperature dependence of the electron occupation p...

Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application

Variation of switching mechanism in TiO2 thin film resistive random access memory with Ag and graphene electrodes

0167-9317/$ see front matter 2012 Elsevier B.V. A http://dx.doi.org/10.1016/j.mee.2012.11.009 ⇑ Corresponding authors. Tel.: +1 412 648 8989. E-mail addresses: [email protected] (M. Yun), We report the fabrication of resistive random access memory (ReRAM) on both Si and PET flexible substrates using TiO2 as the dielectric spacer between Ag electrodes. Ag/TiO2/Ag ReRAM shows unipolar switching...

The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template

UNLABELLED A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe2O4 thin film. Stable and repeatable resistive switching behavior is acquired at the same time. On the basis of conductive filament model, possible generation mechanisms for the ...